| PART |
Description |
Maker |
| STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| B-393P |
Center Off, 200 Amps, 120/208 VAC, 50/60/400 Hz
|
Tyco Electronics
|
| STB200NF04 STB200NF04-1 STB200NF04T4 STP200NF04 |
30V N-Channel PowerTrench MOSFET
120 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 40V - 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
120 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| B-429CA |
B-429CA 3PST N.O., 350 Amps,120/208 VAC, 400 Hz
|
Tyco Electronics
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| TP1220L-1TA TP1220L-1TR1 TP2020L-1TA TP2020L-1TR1 |
120 mA, 120 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
120 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| FDV302PNL |
Digital FET,P-Channel 120 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| 2SK2753-01 |
N-channel MOS-FET 50 A, 120 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FDMS8018 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30 V, 120 A, 1.8 mΩ
|
Fairchild Semiconductor
|
|
